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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. HAMMER DRIVER, PULSE MOTOR DRIVE APPLICATION.
FEATURE ᴌHigh DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A).
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEB0 IC PC Tj Tstg
RATING 100 80 5 4 30 150
-55ᴕ150
UNIT V V V A W ᴱ ᴱ
H
E Q
KTD686
EPITAXIAL PLANAR NPN TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.70 MAX
2.60
1.50 MAX
1.50 9.
KTD686 Datasheet
