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MJD112 - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

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Datasheet Details

Part number	MJD112
Manufacturer	KEC ↗
File Size	391.48 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	MJD112-KEC.pdf

MJD112 Product details

Features

High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.

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Other Datasheets by KEC

MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR
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Published: Sep 3, 2017 |