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MJD112L Datasheet Epitaxial Planar NPN Transistor

Manufacturer: KEC

Overview: SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.

MJD112L Distributor