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TIP112 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. TIP112.

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Datasheet preview – TIP112

Datasheet Details

Part number TIP112
Manufacturer KEC Corporation
File Size 648.73 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet TIP112 Datasheet
Additional preview pages of the TIP112 datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117.
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