KHB2D0N60F1 transistor equivalent, (khb2d0n60f1/p1) n-channel mos field effect transistor.
VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V
K M L J D N N
P
Qg(typ.) = 10.9nC
H
1
2
3
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Tc=.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
A O C F E G B Q I
DIM MILLIMETERS .
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