¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max.) @ VGS=10V : RDS(ON)=13.2m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIM.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU068N03D www.DataSheet4U.com N-Ch Trench MOSFET A .

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