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KU048N03D - N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converter.

Key Features

  • VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max. ) @ VGS=10V : RDS(ON)=6.5m (Max. ) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM.

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Datasheet Details

Part number KU048N03D
Manufacturer KEC
File Size 89.58 KB
Description N-Ch Trench MOSFET
Datasheet download datasheet KU048N03D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU048N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max.) @ VGS=10V : RDS(ON)=6.5m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3.