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KU048N03D - N-Ch Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converter.

Features

  • VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max. ) @ VGS=10V : RDS(ON)=6.5m (Max. ) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM.

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Datasheet Details

Part number KU048N03D
Manufacturer KEC semiconductor
File Size 89.58 KB
Description N-Ch Trench MOSFET
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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU048N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=4.8m (Max.) @ VGS=10V : RDS(ON)=6.5m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3.
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