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KU068N03D - N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converter.

Key Features

  • ¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max. ) @ VGS=10V : RDS(ON)=13.2m (Max. ) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM.

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Datasheet Details

Part number KU068N03D
Manufacturer KEC
File Size 93.71 KB
Description N-Ch Trench MOSFET
Datasheet download datasheet KU068N03D Datasheet

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Full PDF Text Transcription (Reference)

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU068N03D www.DataSheet4U.com N-Ch Trench MOSFET A C K D L FEATURES ¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max.) @ VGS=10V : RDS(ON)=13.2m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3.