KU063N03Q - N-channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for DC/DC Converter and Battery pack..

Features

VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max. ) @ VGS=10V RDS(ON)=10.7m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

KEC semiconductor

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Datasheet Details

Part number	KU063N03Q
Manufacturer	KEC semiconductor
File Size	879.92 KB
Description	N-channel MOSFET
Datasheet	KU063N03Q Datasheet
Additional preview pages of the KU063N03Q datasheet.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. FEATURES VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max.) @ VGS=10V RDS(ON)=10.7m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) VDSS VGSS ID IDP PD Tj Tstg 30 20 16 64 2.

Published: Jul 12, 2010 |