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KU063N03Q - N-channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for DC/DC Converter and Battery pack..

Key Features

  • VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max. ) @ VGS=10V RDS(ON)=10.7m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

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Datasheet Details

Part number KU063N03Q
Manufacturer KEC
File Size 879.92 KB
Description N-channel MOSFET
Datasheet download datasheet KU063N03Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. FEATURES VDSS=30V, ID=16A. Drain to Source On Resistance. RDS(ON)=6.3m (Max.) @ VGS=10V RDS(ON)=10.7m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) VDSS VGSS ID IDP PD Tj Tstg 30 20 16 64 2.