KU056N03Q - N-Ch Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for DC/DC Converter and Battery pack.

Features

VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max. ) @ VGS=10V RDS(ON)=9.7m (Max. ) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25.

KEC semiconductor

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Datasheet Details

Part number	KU056N03Q
Manufacturer	KEC semiconductor
File Size	90.54 KB
Description	N-Ch Trench MOSFET
Datasheet	KU056N03Q Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack. D P KU056N03Q www.DataSheet4U.com N-Ch Trench MOSFET H T G L FEATURES VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise noted) SYMBOL RATING VDSS VGSS (Note 1) ID IDP (Note 1) PD Tj Tstg (Note 1) RthJA 30 20 17 68 2.

Published: Jul 12, 2010 |