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KIA

2N60H Datasheet Preview

2N60H Datasheet

N-CHANNEL MOSFET

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KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
1.Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2. Features
RDS(ON)=4.1Ω@VGS=10V.
Low gate charge (typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3. Pin configuration
Pin
1
2
3
4
1 of 6
Function
Gate
Drain
Source
Drain
Rev 1.1 JAN 2014




KIA

2N60H Datasheet Preview

2N60H Datasheet

N-CHANNEL MOSFET

No Preview Available !

KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current continuous TC=25ºC
TC=100ºC
Drain current pulsed (note1)
Avalanche Enlsed
Repetitive (note1)
Single pulse (note2)
Peak diode recovery dv/dt (note3)
VDSS
VGSS
ID
IDP
EAR
EAS
dv/dt
Total power dissipation
TC=25ºC
Derate above 25ºC
PD
Junction temperature
TJ
Storage temperature
TSTG
*Drain current limited by maximum junction temperature.
(TC= 25ºC, unless otherwise noted)
Rating
252/251 220 220F
Units
600 V
±30
V
2.0* 2.0 2.0*
A
1.35* 1.35 1.35*
A
8* 8 8*
A
4.4 mJ
120 mJ
4.5 V/ns
44 55.5 23.6
W
0.35 0.44 0.19
W/ ºC
+150
ºC
-50~+150
ºC
5. Thermal characteristics
Parameter
Thermal resistance,Junction-amient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
RthJA
RthCS
RthJC
Rating
252/251 220
62.5 62.5
-- 0.5
2.87 2.25
220F
62.5
--
5.3
Unit
ºC/W
ºC/W
ºC/W
2 of 6
Rev 1.1 JAN 2014


Part Number 2N60H
Description N-CHANNEL MOSFET
Maker KIA
PDF Download

2N60H Datasheet PDF






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