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2N60H - N-CHANNEL MOSFET

Description

The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

2.

Features

  • RDS(ON)=4.1Ω@VGS=10V.
  • Low gate charge (typical 9nC).
  • High ruggedness.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA.

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Datasheet Details

Part number 2N60H
Manufacturer KIA
File Size 485.47 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 2N60H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features  RDS(ON)=4.1Ω@VGS=10V.  Low gate charge (typical 9nC)  High ruggedness  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 4.
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