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KODENSHI KOREA

SNN5010D Datasheet Preview

SNN5010D Datasheet

Advanced N-Ch Power MOSFET

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SNN5010D
Advanced N-Ch Power MOSFET
DC/DC CONVERTER APPLICATIONS
Features
High Voltage : BVDSS=100V(Min.)
Low Crss : Crss=130pF(Typ.)
Low gate charge : Qg=75nC(Typ.)
Low RDS(ON) : RDS(ON)=26mΩ(Max.)
Ordering Information
Type No.
SNN5010D
Marking
SNN5010
Package Code
TO-252
PIN Connection
GS
D
G
TO-252
D
S
Marking Diagram
SNN
5010
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
VDSS
VGSS
ID
(TC=25)
(TC=100)
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
PD
IAS
EAS
IAR
EAR
TJ
Tstg
* Limited by maximum junction temperature
Rating
100
±20
50
31
150
65
25
173
50
6.5
150
-55~150
Characteristic
Thermal
resistance*
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
1.92
62.5
KSD-T6O016-001
Unit
V
V
A
A
W
A
mJ
A
mJ
°C
Unit
/W
1




KODENSHI KOREA

SNN5010D Datasheet Preview

SNN5010D Datasheet

Advanced N-Ch Power MOSFET

No Preview Available !

SNN5010D
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0
Gate threshold voltage
VGS(th) ID=250uA, VDS=VGS
Drain-source cut-off current
IDSS
VDS=100V, VGS=0V
VDS=80V, VGS=0V,
TJ=125
Gate leakage current
IGSS
VDS=0V, VGS=±20V
Drain-source on-resistance
RDS(ON)
VGS=10V, ID=25A
VGS=4.8V, ID=1A
Forward transfer conductance
gfs VDS=40V, ID=25A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=50V, ID=50A
RG=25
③④
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD=80V, VGS=10V
ID=50A
Qgd ③④
Min.
100
1.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.5
-
Max.
-
3.4
1
- 100
-
21
130
30
2100
640
130
25
250
110
140
75
13
36
±100
26
200
-
2310
704
143
-
-
-
-
83
15
40
Unit
V
V
uA
nA
mΩ
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current
Source current (Pulsed)
Forward voltage
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=50A
- - 50
- - 150
- - 1.5
Reverse recovery time
Reverse recovery charge
trr IS=50A, VGS=0V
Qrr dIF/dt=100A/us
- 100 -
- 380 -
Unit
A
V
ns
uC
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=0.5mH, IAS=25A, VDD=10V, RG=25, Starting TJ=25
Pulse Test : Pulse Width300us, Duty cycle2%
Essentially independent of operating temperature
KSD-T6O016-001
2


Part Number SNN5010D
Description Advanced N-Ch Power MOSFET
Maker KODENSHI KOREA
Total Page 8 Pages
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