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2SB1275 - Power Transistor

Features

  • High breakdown voltage. (BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 Typ. 30pF at VCB = 10V High transition frequency. (fT = 50MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -160 -160 -5 -1.5 -3 Col.

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SMD Type Power Transistor 2SB1275 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 Typ. 30pF at VCB = 10V High transition frequency.(fT = 50MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -160 -160 -5 -1.
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