2SD965-Q Datasheet PDF (NPN Silicon Transistors)

2SD965-Q - NPN Silicon Transistors

Features

s.
Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the low-voltage power supply. SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1.
Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCB.

Datasheet Details

Part number	2SD965-Q
Manufacturer	Kexin
File Size	123.13 KB
Description	NPN Silicon Transistors
Datasheet	2SD965-Q Datasheet
Additional preview pages of the 2SD965-Q datasheet.

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Full PDF Text Transcription

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SMD Type TransistIoCrs NPN Silicon Epitaxial Transistors 2SD965-Q ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low-voltage power supply. SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 3.00±0.1 Rating 40 20 5 5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ 1.Base 2.Collector 3.

Published: Aug 6, 2017 |