Datasheet Summary
SMD Type
MOS Field Effect Transistor 2SJ601
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
IC MOSFET
Features
Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A)
Unit: mm
+0.2 9.70-0.2
+0.1 0.80-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
Built-in gate protection diode
+0.15 4.60-0.15
+0.15 0.50-0.15
Low Ciss: Ciss = 3300 pF TYP.
0.127 max
+0.15 5.55-0.15
1 Gate 2 Drain 3 Source
+0.1...
