SI2301 - P-Channel MOSFET

Kexin Semiconductor

Datasheet Details

SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET.

s.
VDS (V) =-20V.
RDS(ON) ＜ 100mΩ (VGS =-4.5V).
RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃).
1 Ta=25℃ Ta=70℃ Pulsed Drain Current.
2 Power Dissipation.

Brand Logo	Part Number	Description	Manufacturer
	SI2301	P-Channel MOSFET	YANGJING
	SI2301	P-Channel Enhancement Mode Field Effect Transistor	MCC
	SI2301	P-CHANNEL MOSFET	BLUE ROCKET ELECTRONICS
SiPU	Si2301	P-Channel MOSFET	SiPU
	SI2301A	P-Channel MOSFET	MCC

Part Number	Description
SI2301BDS	P-Channel Enhancement MOSFET
SI2301DS	P-Channel MOSFET
SI2301DS-HF	P-Channel MOSFET
SI2300	N-Channel MOSFET
SI2302DS	N-Channel MOSFET
SI2302DS-HF	N-Channel MOSFET
SI2303BDS	P-Channel Enhancement MOSFET
SI2303DS	P-Channel Enhancement MOSFET
SI2303DS-HF	P-Channel MOSFET
SI2304DS	N-Channel Enhancement MOSFET