SI2301DS Key Features
- VDS (V) =-20V
- RDS(ON) < 100mΩ (VGS =-4.5V)
- RDS(ON) < 150mΩ (VGS =-2.5V)
| Manufacturer | Part Number | Description |
|---|---|---|
| SI2301DS | P-Channel MOSFET | |
TEMIC Semiconductors |
Si2301DS | P-Channel MOSFET |
VBsemi |
SI2301DS-T1-GE3 | P-Channel MOSFET |
YANGJING |
SI2301 | P-Channel MOSFET |
Micro Commercial Components |
SI2301 | P-Channel Enhancement Mode Field Effect Transistor |