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GPF5N10 - N-Channel 100V Enhancement Mode Power MOSFET

Download the GPF5N10 datasheet PDF. This datasheet also covers the GPF5N10-LITE variant, as both devices belong to the same n-channel 100v enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics.

This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification application.

Key Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • Easy to drive.
  • Marking: GPF5N10.
  • Qualified according to AEC-Q101.
  • Weight: 2070mg.
  • RoHS Compliant GPF5N10 BVDSS=100V RDS(ON) ≦5mΩ@VGS=10V ID,pulse= 390A D:Drain G:Gate S:Source (ITO-220AB) Top View.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPF5N10-LITE-ON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPF5N10
Manufacturer LITEON
File Size 427.50 KB
Description N-Channel 100V Enhancement Mode Power MOSFET
Datasheet download datasheet GPF5N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 100V Enhancement Mode Power MOSFET General Description GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification application.