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S-LN4812LT1G - N-Channel Enhancement-Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LN4812LT1G
Manufacturer LRC
File Size 279.56 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet S-LN4812LT1G Datasheet

Full PDF Text Transcription for S-LN4812LT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LN4812LT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ Features Advanced trench proce...

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= 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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