LMBT2222AWT1G
LESHAN RADIO PANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 323/SC- 70 package which is designed for low power surface mount applications.
We declare that the material of product pliance with Ro HS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT2222AWT1G S-LMBT2222AWT1G
MAXIMUM RATINGS Rating
Symbol
Value
Unit
CASE 419- 02, STYLE 3 SOT- 323 /SC
- 70
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
V CEO V
V EBO IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature
40 Vdc 75 Vdc 6.0 Vdc 600 m Adc
Symbol
PD RθJA TJ , Tstg
Max
- 55 to +150
Unit m W
°C/W °C
1 BASE
3 COLLECTOR
2...
