LMBT2222ADW1T1G
LMBT2222ADW1T1G is Dual Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product pliance with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS Rating
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
THERMAL CHARACTERISTICS Characteristic
Total Package Dissipation (Note 1) TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ORDERING INFORMATION
Symbol VCEO VCBO VEBO IC
Value 40 75 6.0 600
Unit Vdc Vdc Vdc m Adc
Symbol PD
Max 150
Unit m W
Rq JA
833 °C/W
TJ, Tstg
- 55 to +150 °C
Device
LMBT2222ADW1T1G S-LMBT2222ADW1T1G LMBT2222ADW1T3G S-LMBT2222ADW1T3G
Marking
XX XX
Shipping
3000/Tape & Reel 10000/Tape & Reel
LMBT2222ADW1T1G S-LMBT2222ADW1T1G
6 5
1 2
SC-88
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
Rev.O...
