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LMBT2222ADW1T3G - Dual Transistor

Download the LMBT2222ADW1T3G datasheet PDF. This datasheet also covers the LMBT2222ADW1T1G variant, as both devices belong to the same dual transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (LMBT2222ADW1T1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LMBT2222ADW1T3G
Manufacturer Leshan Radio Company
File Size 239.45 KB
Description Dual Transistor
Datasheet download datasheet LMBT2222ADW1T3G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature ORDERING INFORMATION Symbol VCEO VCBO VEBO IC Value 40 75 6.