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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
LMBT2222LT1 LMBT2222ALT1
3
1
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MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
2
2222 30 60 5.0 600
2222A 40 75 6.0 600
Unit Vdc Vdc Vdc mAdc
1 BASE 3 COLLECTOR
SOT– 23
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.
LMBT2222ALT1 Datasheet
