LMBT2222ATT1G
LMBT2222ATT1G is General Purpose Transistor manufactured by Leshan Radio Company.
Features
- We declare that the material of product pliance with Ro HS requirements.
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT2222ATT1G S-LMBT2222ATT1G
SC-89
ORDERING INFORMATION
Device
Maring
LMBT2222ATT1G S-LMBT2222ATT1G
1P 1P
Shippin†g 3000 / Tape & Reel
LMBT2222ATT3G S-LMBT2222ATT3G
1P 10000 / Tape & Reel 1P
MAXIMUM RATINGS (TA = 25°C) Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current
- Continuous
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation (Note 1) TA = 25°C
Thermal Resistance, Junction- to- Ambient
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC
Symbol PD
Rq JA
TJ, Tstg
Max Unit 40 Vdc 75 Vdc 6.0 Vdc 600 m Adc
Max Unit 150 m W
833 °C/W
- 55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage (Note 1) (IC = 1.0 m Adc, IB = 0)
Collector
- Base Breakdown Voltage (IC = 10 m Adc, IE = 0)
Emitter
- Base Breakdown Voltage (IE = 10 m Adc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0...