LMBT2222ALT1G
LMBT2222ALT1G is General Purpose Transistor manufactured by Leshan Radio Company.
FEATURES
1) We declare that the material of product pliant with
Ro HS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
- DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
1P
3000/Tape&Reel
LMBT2222ALT3G
1P
10000/Tape&Reel
LMBT2222ALT1G S-LMBT2222ALT1G
1 2 SOT-23
- MAXIMUM RATINGS(Ta = 25℃) Parameter
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
- THERMAL CHARACTERISTICS Total Device Dissipation,
FR- 5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage temperature
1. FR- 5 = 1.0×0.75×0.062 in.
2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina.
Symbol VCEO VCBO VEBO IC
Limits 40 75 6.0 600
Unit Vdc Vdc Vdc m Adc
RΘJA PD
RΘJA TJ,Tstg
225 1.8 556
300 2.4 417
- 55∼+150 m W m W/℃ ℃/W m W m W/℃ ℃/W
℃
June,2015
Rev.A 1/6
LESHAN RADIO PANY, LTD.
LMBT2222ALT1G,S-LMBT2222ALT1G
- ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic...