LMBT5087LT1
LMBT5087LT1 is Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Low Noise Transistor
PNP Silicon
- Pb- Free Package May be Available. The G- Suffix Denotes a
Pb- Free Lead Finish
ORDERING INFORMATION
Device LMBT5087LT1
Package SOT- 23
Shipping 3000/Tape & Reel 3000/Tape & Reel
LMBT5087LT1G SOT- 23
SOT- 23 (TO- 236AB)
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V CEO V CBO V EBO IC Value
- 50
- 50
- 3.0
- 50 Unit Vdc Vdc Vdc m Adc
3 COLLECTOR
1 BASE
DEVICE MARKING
LMBT5087LT1=2Q
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 417
- 55to+150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
R θJA T J , T stg
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol V (BR)CEO V (BR)CBO I CBO
- -
- 10
- 50 Min
- 50
- 50 Max
- - Unit Vdc Vdc n Adc
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (I C =
- 1.0 m Adc, I B = 0) Collector- Base Breakdown Voltage (I C...
