Datasheet Summary
LSIC1MO120G0120 1200 V, 120 mOhm N-Channel SiC MOSFET
Silicon Carbide MOSFET Datasheet
Agency Approvals and Environmental
Environmental Approvals
Circuit Diagram
Product Summary
Characteristic
Typical RDS(ON)
ID (TC
°C)
Value 1200 120
Unit V mOhm A
Features
- Optimized for high-frequency, high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operations at all temperatures
- Ultra-low on-resistance
- Optimized package with separate driver source pin
Applications
- High-frequency applications
- Solar Inverters
- Switch Mode Power Supplies
- UPS
- Motor Drives
- High...