LSIC1MO120G0025 Description
LSIC1MO120G0025 LSIC1MO120G0025 1200 V, 25 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Pinout Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1200 25 70 Unit.
LSIC1MO120G0025 Key Features
- Optimized for high-frequency, high-efficiency