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LSIC1MO120G0025 - N-Channel SiC MOSFET

Description

Specifications are subject to change without notice.

Features

  • Optimized for high-frequency, high-efficiency.

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Full PDF Text Transcription

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LSIC1MO120G0025 LSIC1MO120G0025 1200 V, 25 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Pinout Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1200 25 70 Unit V mOhm A Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source pin • RoHS compliant, lead-free, and halogen-free Applications • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Hea
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