LSIC1MO120E0160 Overview
SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C) Value 1200 160 14 Unit V mΩ A Circuit Diagram TO-247-3L 1 23.
LSIC1MO120E0160 Key Features
- Optimized for highfrequency, high-efficiency