LSIC1MO170E0750 Description
LSIC1MO170E0750 LSIC1MO170E0750 1700 V, 750 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Circuit Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1700 750 4.4.
LSIC1MO170E0750 Key Features
- Optimized for high-frequency, high-efficiency