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LSIC1MO170E1000 Datasheet Enhancement-mode SiC MOSFET

Manufacturer: Littelfuse

Overview

SiCSMiCOMSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C) Value 1700 750 3.

Key Features

  • Optimized for highfrequency, high-efficiency.