Datasheet4U Logo Datasheet4U.com

LSIC1MO170E1000 - Enhancement-mode SiC MOSFET

Features

  • Optimized for highfrequency, high-efficiency.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
SiCSMiCOMSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C) Value 1700 750 3.
Published: |