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LSIC1MO120G0120 - N-Channel SiC MOSFET

Description

Specifications are subject to change without notice.

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Features

  • Optimized for high-frequency, high-efficiency.

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Full PDF Text Transcription

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LSIC1MO120G0120 LSIC1MO120G0120 1200 V, 120 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Circuit Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1200 120 18 Unit V mOhm A Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source pin Applications • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Heating 1 Specifications are subject to chan
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