Datasheet Summary
LSIC1MO170E0750 1700 V, 750 mOhm N-Channel SiC MOSFET
Silicon Carbide MOSFET Datasheet
Agency Approvals and Environmental
Environmental Approvals
Circuit Diagram
Product Summary
Characteristic
Typical RDS(ON)
ID (TC
°C)
Value 1700 750 4.4
Unit V mOhm A
Features
- Optimized for high-frequency, high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operations at all temperatures
Ultra-low on-resistance
Applications
- High-frequency applications
- Solar Inverters
- Switch Mode Power Supplies
- UPS
- Motor Drives
- High Voltage DC/DC Converters
- Battery Chargers
-...