LSIC1MO170E1000 Description
SiCSMiSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C) Value 1700 750 3.5 Unit V mΩ A Circuit Diagram.
LSIC1MO170E1000 Key Features
- Optimized for highfrequency, high-efficiency