* Optimized for highfrequency, high-efficiency applications
* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operation at all temperatures
* Ultra-low on-resistance Applications
LSIC1MO170E1000 Datasheet (1.01 MB)
LSIC1MO170E1000
1.01 MB
Enhancement-mode sic mosfet.
SiCSMiCOMSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product .
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