Description
This series of silicon carbide (SiC) Schottky diodes has neg-
SiC SchottklmiygaibxDliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°ilCit.yT, haensdea diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are de
Features
- AEC-Q101 qualified.
- Positive temperature coefficient for safe operation and ease of paralleling.
- 175 °C maximum operating junction temperature.
- Excellent surge capability.
- Extremely fast, temperature-independent switching behavior.
- Dramatically reduced switching losses compared to Si bipolar diodes
Circuit Diagram TO-220-2L
Maximum Ratings Characteristics
Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current.