Datasheet Summary
LSIC2SD120A10A 1200 V, 10 A SiC Schottky Barrier Diode
Silicon Carbide Schottky Diode Datasheet
Agency Approvals and Environmental
Environmental Approvals
Circuit Diagram TO-220-2L
Product Summary
Characteristic VRRM
IF (TC 135 °C) QC (VR: 0 800 V)
Value 1200
15 56
Unit V A nC
Features
- AEC-Q101 qualified
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses pared to Si bipolar diodes
- RoHS pliant, lead-free, and halogen-free
Applications
- Boost diodes in PFC...