2N6676 Datasheet | MACOM Technology Solutions

2N6676 & 2N6678 NPN High Power Silicon Transistor Features - Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538 - TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678 ICEX µAdc VEB = 7 Vdc IEBO mAdc VCB = 450 Vdc, 2N6676 VCB = 650 Vdc, 2N6678 ICBO mAdc 300 400 - - - IC = 1 Adc, VCE = 3 Vdc...