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2N6676 - NPN High Power Silicon Transistor

This page provides the datasheet information for the 2N6676, a member of the 2N6676-MA NPN High Power Silicon Transistor family.

Datasheet Summary

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.

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Datasheet preview – 2N6676

Datasheet Details

Part number 2N6676
Manufacturer MA-COM
File Size 458.79 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6676 Datasheet
Additional preview pages of the 2N6676 datasheet.

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Full PDF Text Transcription

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2N6676 & 2N6678 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.
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