2N6676 - (2N66xx) NPN POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Download the 2N6676 datasheet PDF. This datasheet also covers the 2N6691 variant, as both devices belong to the same (2n66xx) npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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2N6676 (2n66xx) npn power silicon transistor by Microsemi (now Microchip Technology) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6691_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6676
Manufacturer	Microsemi (now Microchip Technology)
File Size	59.64 KB
Description	(2N66xx) NPN POWER SILICON TRANSISTOR
Datasheet	2N6676 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N6674	NPN POWER SILICON TRANSISTOR
2N6675	NPN POWER SILICON TRANSISTOR
2N6678	(2N66xx) NPN POWER SILICON TRANSISTOR
2N6648	PNP DARLINGTON POWER SILICON TRANSISTOR
2N6649	PNP DARLINGTON POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6676 2N6678 2N6691 2N6693 300 400 450 650 450 650 8.0 5.0 15 2N6676 2N6691 2N6678 2N6693 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6676, 2N6678 TO-3 (TO-204AA)* @ TA = 250C @ TC = 250C(1) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.