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MA4AGP907 Datasheet Preview

MA4AGP907 Datasheet

AlGaAs Flip Chip PIN Diodes

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MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Features
Low Series Resistance
Ultra Low Capacitance
Millimeter Wave Switching & Cutoff Frequency
2 Nanosecond Switching Speed
Can be Driven by a Buffered TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
V4
Chip Dimensions
MA4AGP907 and MA4AGFCP910
Description
M/A-COM Technology Solutions MA4AGP907 and
MA4AGFCP910 are Aluminum Gallium Arsenide
(AlGaAs) flip-chip PIN diodes. These devices are
fabricated on OMCVD epitaxial wafers using a process
optimized for high device uniformity and exceptionally
low parasitics. The end result is a diode with an
extremely low RC product, (0.1ps) and 2-3nS
switching characteristics. They are fully passivated
with silicon nitride and have an added polymer layer
for scratch protection. The protective coating prevents
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 make them ideal for RF switch and
phase shifter applications through millimeter wave
frequencies. The diodes are designed for use in
pulsed or CW applications, where single digit nS
switching speed is required. The low capacitance of
these diodes make them ideal for use in microwave
multi-throw switch assemblies, where the series
capacitance of each “off” port adversely loads the input
and affects VSWR.
Absolute Maximum Ratings TAMB = +25°C
(unless otherwise specified)
Parameter
Absolute Maximum
Reverse Voltage
MA4AGP907 -50V
MA4AGFCP910 -75V
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
Dissipated Power (RF & DC )
50mW
C.W. Incident Power
+23 dBm
Mounting Temperature
1
+280°C for 10 seconds
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
Notes:
1. Gold Pads 14µM thick.
2. Yellow areas indicate ohmic gold mounting pads.
3. Dimensions A thru F are identical for both devices
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A 0.0260 0.0270 0.6604 0.6858
B 0.0135 0.0145 0.3429 0.3683
C 0.0065 0.0075 0.1651 0.1905
D 0.0043 0.0053 0.1092 0.1346
E 0.0068 0.0073 0.1727 0.1854
F 0.0182 0.0192 0.4623 0.4877
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.




MA-COM

MA4AGP907 Datasheet Preview

MA4AGP907 Datasheet

AlGaAs Flip Chip PIN Diodes

No Preview Available !

MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
V4
Parameter
Total Capacitance
Total Capacitance 1
Electrical Specifications @ TAMB = +25°C
Symbol
Conditions
MA4AGP907 -5V,1MHz
CT
MA4AGFCP910 -10V,1MHz
MA4AGP907 MA4AGFCP910
Units
Typ. Max. Typ. Max.
pF 0.025 0.030 0.018 0.021
CT
-5V, 10GHz
pF 0.020 —— 0.018 0.021
Series Resistance
RS
+10mA, 1MHz
5.2 7.0 —— ——
Series Resistance 2
RS
+10mA, 10GHz
4.2 —— 5.2 6.0
Forward Voltage
VF
+10mA
Reverse Leakage Current 3 IR
Switching Speed 4
TRISE
TFALL
MA4AGP907 VR = -50V
MA4AGFCP910 VR = -75V
10GHz
Carrier Lifetime
TL IF = 10mA / IREV = 6mA
V 1.33 1.45 1.33 1.45
μA —— 10 —— 10
nS 2 —— 2 ——
nS —— —— 4
——
Notes:
1)
2)
3)
4)
Capacitance is determined by measuring the isolation of a single series diode in a 50transmission
line at 10GHz.
Series resistance is determined by measuring the insertion loss of a single series diode in a 50
transmission line at 10GHz.
The max rated VR( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is
measured to be <10μA
Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series
mounted diode. Driver delay is not included.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
2


Part Number MA4AGP907
Description AlGaAs Flip Chip PIN Diodes
Maker MA-COM
Total Page 6 Pages
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