NPA1007 amplifier equivalent, gan on silicon power amplifier.
* GaN on Si HEMT D-Mode Amplifier
* Suitable for Linear & Saturated Applications
* Broadband Operation from 20 - 2500 MHz
* 28 V Operation
* 12.5 dB G.
* Broadband Operation from 20 - 2500 MHz
* 28 V Operation
* 12.5 dB Gain @ 2500 MHz
* 43% Drain Efficien.
The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.
The NPA1007 is a gener.
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