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NPA1003QA - 28V GaN Amplifier

General Description

The NPA1003QA is a GaN on silicon power amplifier optimized for 20 - 1500 MHz operation.

This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 16-lead QFN plastic package.

Key Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Amplifier 28 V, 5 W 20 - 1500 MHz Features • GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation from 20 - 1500 MHz • 28 V Operation • 16 dB Gain @ 1 GHz • 42% PAE @ 1 GHz • 100% RF Tested • 50 Ω Input / Output Matched • Lead-Free 4 mm 16-lead QFN plastic Package • RoHS* Compliant and 260°C Reflow Compatible Description The NPA1003QA is a GaN on silicon power amplifier optimized for 20 - 1500 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 16-lead QFN plastic package. The NPA1003QA is ideally suited for broadband general purpose, test and measurement, defense communications, land mobile radio and wireless infrastructure.