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NPTB00004B Datasheet Gan Power Transistor

Manufacturer: MACOM Technology Solutions

Overview: GaN Power Transistor, 28 V, 5 W DC - 6 GHz.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.

Ordering Information Part Number NPTB00004B NPTB00004B-SMB NPTB00004B-TR0500 Package Bulk Quantity Sample Board Tape and Reel Functional Schematic N/C 1 RFIN / VG 2 RFIN / VG 3 N/C 4 9 Paddle Pin Configuration 6 NPTB00004B Rev.

Key Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

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