NPTB00004B
NPTB00004B is GaN Power Transistor manufactured by MACOM Technology Solutions.
- Part of the NPTB00004B-MA comparator family.
- Part of the NPTB00004B-MA comparator family.
Features
- Ga N on Si HEMT D-Mode Transistor
- Suitable for linear and saturated applications
- Tunable from DC
- 6 GHz
- 28 V Operation
- 14.8 d B Gain @ 2.5 GHz
- 57 % Drain Efficiency @ 2.5 GHz
- 100 % RF Tested
- Industry standard SOIC plastic package
- Ro HS- pliant
Applications
- Defense munications
- Land Mobile Radio
- Avionics
- Wireless Infrastructure
- ISM
- VHF/UHF/L/S-Band Radar
Description
The NPTB00004B Ga N HEMT is a power transistor optimized for DC
- 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 d Bm) in an industry standard surface mount plastic package.
Ordering Information
Part Number NPTB00004B NPTB00004B-SMB NPTB00004B-TR0500
Package Bulk Quantity Sample Board Tape and Reel
Functional Schematic
N/C 1 RFIN / VG 2 RFIN / VG 3
N/C 4
9 Paddle
Pin Configuration
Rev. V1
8 N/C 7 RFOUT / VD 6 RFOUT / VD 5 N/C
1, 4, 5, 8
N/C
No Connection
2, 3
RFIN / VG
RF Input / Gate
6, 7
RFOUT / VD
RF Output /...
