CGH27030 hemt equivalent, 82v gan hemt.
* VHF - 3.0 GHz Operation
* 30 W Peak Power Capability
* 15 dB Small Signal Gain
* 4.0 W PAVE at < 2.0 % EVM
* 28% Drain Efficiency at 4 W Average Pow.
The unmatched transistor is available in both screwdown, flange and solder-down, pill packages.
Package Types: 440196 .
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and B.
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