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CGH27030 - 82V GaN HEMT

General Description

The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications.

Key Features

  • VHF - 3.0 GHz Operation.
  • 30 W Peak Power Capability.
  • 15 dB Small Signal Gain.
  • 4.0 W PAVE at < 2.0 % EVM.
  • 28% Drain Efficiency at 4 W Average Power.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screwdown, flange and solder-down, pill packages. Package Types: 440196 and 440166 PN’s: CGH27030P and CGH27030F Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier Parameter Small Signal Gain EVM at PAVE = 36 dBm Drain Efficiency at 36 dBm Input Return Loss 2.3 GHz 15.6 1.73 28.1 6.6 2.4 GHz 15.5 1.85 28.7 6.2 2.5 GHz 15.3 1.85 28.9 6.0 2.6 GHz 15.