CGH27030 Datasheet, Hemt, MACOM

CGH27030 Features

• Hemt
• VHF - 3.0 GHz Operation
• 30 W Peak Power Capability
• 15 dB Small Signal Gain
• 4.0 W PAVE at < 2.0 % EVM
• 28% Drain Efficiency at 4 W Averag

PDF File Details

Part number:

CGH27030

Manufacturer:

MACOM

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950.49kb

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📄 Datasheet

Description:

82v gan hemt. The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain

CGH27030 Application

• Applications The unmatched transistor is available in both screwdown, flange and solder-down, pill packages. Package Types: 440196 and 440166 PN’s

TAGS

CGH27030

MACOM

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