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CMPA2060035F Datasheet Gan Mmic Power Amplifier

Manufacturer: MACOM Technology Solutions

Overview: CMPA2060035F 35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier.

General Description

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Key Features

  • 28 dB Small Signal Gain.
  • 35 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.

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