CMPA2060035F
CMPA2060035F is GaN MMIC Power Amplifier manufactured by MACOM Technology Solutions.
Description
The CMPA2060035F is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si and Ga As transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.
PN : CMPA2060035F Package Type : 440219
Typical Performance Over 2.0-6.0 GHz, 28 V (TC = 25ºC)
Parameter
2.0 GHz
4.0 GHz
Small Signal Gain
Output Power1
Power Gain1
Power Added Efficiency1
Note: 1 VDD = 28 V, IDQ = 1.2 A, PIN = 27 d Bm. All data tested CW
6.0 GHz 25.0 32.5 18.1 36
Units d B W d B %
Features
- 28 d B Small Signal Gain
- 35 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
Applications
- Ultra Broadband Amplifiers
- Fiber Drivers
- Test Instrumentation
- EMC Amplifier Drivers
1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit .ma. for additional data sheets and product information.
For further information and support please visit:
Rev. 1.0, 2022-8-26 https://.ma./support
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Drain-Source Voltage Gate-Source Voltage Storage Temperature Operating Junction Temperature Forward Gate Current Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature
Symbol VDSS VGS TSTG TJ IG τ RθJC...
