MACOM Technology Solutions CMPA2735015D
The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.| Part No. | CMPA2735015D |
|---|---|
| Datasheet | CMPA2735015D Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.FEATURES
● 35 dB small signal gain● 20 W typical PSAT
● Operation up to 50 V
● High breakdown voltage
● High temperature operation
● Size 0.118 x 0.071 x 0.004 inches
APPLICATIONS
● Civil and military pulsed radar amplifiers Typical Performance Over 2.7-3.5 GHz (TC = 25 °C) Parameter Small Signal Gain Output Power1 Power Gain1 PAE1 2.7 GHz 36 20 27 51 2.9 GHz 35 22 27 57 3.1 GHz 35 26 28 54 Note: 1 PIN = 16 dBm, pulse width = 500 μs; duty cycle = 10%. 3.3 GHz 35 27 28 52 3.5 GHz 35 26 28 52 Units dB W dB % 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information.
