| Title | RF Amplifier Amplifier,MMIC,GaN,40W,2.0-6.0GHz,28V |
| Description | The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si an... |
| Features |
Applications
• >30% typical power added • Civil and military pulsed radar efficiency amplifiers 1 • 30 dB small signal gain • Test instrumentation 4 • 36 W typical PSAT • Electronic warfare jamming 2 5 • Operation up to 28 V • High breakdown voltage 6 3 • High temperature operation Note: Features represent typical performance acro... |
| Datasheet |
 CMPA2060035F1 Datasheet - 1.81MB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
1 units: 1237.45 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM CMPA2060035F1
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
1 units: 1237.45 USD |
||
 Richardson RFPD |
1 units: 1266.5 USD |
BuyNow |
