PXAD184218FV
PXAD184218FV is 420W High Power RF LDMOS FET manufactured by MACOM Technology Solutions.
Description
The PXAD184218FV is a 420-watt (P3d B) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAD184218FV Package H-37275G-6/2
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ(MAIN) = 720 m A, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 d B,
3.84 MHz BW
Efficiency
Gain
-20
0 25
PAR @ 0.01% CCDF
-40 pxad184218fv_g1
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main : P1d B = 130 W Typ
- Peak : P1d B = 290 W Typ
- Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration
- Output power at P3d B = 420 W
- Efficiency = 62%
- Gain = 14 d B
- Capable of handling 10:1 VSWR @ 28 V, 110 W (WCDMA) output power
- Integrated ESD protection
- Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal...
