WS1A2639 amplifier equivalent, gan on sic power amplifier.
* GaN on SiC technology
* Frequency: 2496-2690 MHz
* Average Output Power : 6 to 8 W maximum
* PSAT = 48 dBm
* RF inputs matched to 50 Ω and DC matche.
circuit for 2500
– 2700 MHz) VDD = 48 V, IDQ(main) = 25 mA, VGS(peak) =
–5 V, channel ba.
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to.
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