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WS1A2639 Datasheet Gan On Sic Power Amplifier

Manufacturer: MACOM Technology Solutions

Overview: WS1A2639 GaN on SiC Power Amplifier Module for 5G.

General Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz.

The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Key Features

  • GaN on SiC technology.
  • Frequency: 2496-2690 MHz.
  • Average Output Power : 6 to 8 W maximum.
  • PSAT = 48 dBm.
  • RF inputs matched to 50 Ω and DC matched.
  • Gate bias supply for main and peak sides available from either side of device.
  • Integrated harmonic terminations.
  • Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the.

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