WS1A2639 Datasheet | MACOM Technology Solutions

Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the Ga N on Si C technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package. Features - Ga N on Si C technology - Frequency: 2496-2690 MHz - Average Output Power : 6 to 8 W maximum - PSAT = 48 d Bm - RF inputs matched to 50 Ω and DC matched - Gate bias supply for main and peak sides available from either side of device - Integrated harmonic terminations - Pb-free and Ro HS pliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the applications circuit for 2500 - 2700 MHz) VDD = 48 V, IDQ(main) = 25 m A, VGS(peak) = - 5 V, channel bandwidth = 5 MHz, input PAR = 10 d B @ 0.01% CCDF POUT Gain Efficiency ACPR - ACPR + (d BM) (d B) (%) (d Bc) (d Bc) (d B) 2500 MHz - 26.5 - 26.2 2600 MHz - 26 -...