WS1A2639 - GaN on SiC Power Amplifier

Product Overview

MACOM

Datasheet Details

Part number	WS1A2639
Manufacturer	MACOM
File Size	331.51 KB
Description	GaN on SiC Power Amplifier
Datasheet	WS1A2639 Datasheet
Additional preview pages of the WS1A2639 datasheet.

Product details

Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

Features

GaN on SiC technology.
Frequency: 2496-2690 MHz.
Average Output Power : 6 to 8 W maximum.
PSAT = 48 dBm.
RF inputs matched to 50 Ω and DC matched.
Gate bias supply for main and peak sides available from either side of device.
Integrated harmonic terminations.
Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the.

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Published: May 9, 2024 |