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MX44273 - Single 4A Peak Current Low-Side Gate Driver

Description

SOT23-6L Package dissipation rating Package SOT-23 (6) RθJA（℃/W） 108.1 Absolute maximum ratings Parameter VDD to GND IN+ to GND OUT to GND Junction temperature Storage temperature, Tstg Leading temperature （soldering， 10secs） ESD Susceptibility HBM Value -0.3 to 20V -0.3 to 20V -0.3 to VDD+0.3

Features

  • necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The MX44273 provides inverting and noninverting inputs to satisfy requirements for inverting and noninverting gate drive in a single device type. The inputs of the MX44273 are TTL/CMOS Logic compatible and withstand input voltages up to 18 V regardless of the VDD voltage. The MX44273 has split gate outputs, providing flexibility to adjust the turn on and turn off strength independently. The MX44273 has fast switching speed.

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Datasheet Details

Part number MX44273
Manufacturer MAXINMICRO
File Size 378.07 KB
Description Single 4A Peak Current Low-Side Gate Driver
Datasheet download datasheet MX44273 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GENERAL DESCRIPITION The MX44273 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the MX44273 can drive multiple MOSFETs in parallel. The MX44273 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The MX44273 provides inverting and noninverting inputs to satisfy requirements for inverting and noninverting gate drive in a single device type. The inputs of the MX44273 are TTL/CMOS Logic compatible and withstand input voltages up to 18 V regardless of the VDD voltage. The MX44273 has split gate outputs, providing flexibility to adjust the turn on and turn off strength independently.
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