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MSN014WE Datasheet Preview

MSN014WE Datasheet

N-Channel Enhancement Mode Power MOS FET

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MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =20V,ID =14A
RDS(ON) <7 m@ VGS=4.5V
RDS(ON) <9 m@ VGS=2.5V
ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
ESD protected
Application
PWM application
Load switch
PIN Configuration
Lead Free
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0214WE
MSN0214WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
14
44
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
42 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6




MORESEMI

MSN014WE Datasheet Preview

MSN014WE Datasheet

N-Channel Enhancement Mode Power MOS FET

No Preview Available !

MSN014WE
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=10A
VGS=2.5V, ID=5.5A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=5V,ID=10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=10V, RL=1
VGS=10V,RGEN=3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=10V,ID=10A,
Qgs
VGS=4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=10A
IS
Min Typ Max Unit
20 22
--
--
-
1
±10
V
μA
μA
0.6 0.8
-5
-7
30 -
1.2
7
9
-
V
m
S
- 1710
- 232
- 200
-
-
-
PF
PF
PF
- 2.5
- 7.2
- 49
- 10.8
- 17.5
- 1.5
- 4.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
14
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6


Part Number MSN014WE
Description N-Channel Enhancement Mode Power MOS FET
Maker MORESEMI
Total Page 7 Pages
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